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Ordering number : ENA0458
6LN04MH
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
6LN04MH
Features
*
General-Purpose Switching Device Applications
1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 60 10 200 800 0.6 150 --55 to +150 Unit V V mA mA W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 60 1 10 0.4 280 480 2.2 2.4 3.5 26 5.9 3.2 18.5 26 146 69 2.9 3.4 7.0 1.3 typ max Unit V A A V mS pF pF pF ns ns ns ns
Marking : FA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71006PE MS IM TB-00002393 No. A0458-1/4
6LN04MH
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=30V, VGS=4V, ID=200mA VDS=30V, VGS=4V, ID=200mA VDS=30V, VGS=4V, ID=200mA IS=200mA, VGS=0V Ratings min typ 1.0 0.2 0.2 0.83 1.2 max Unit nC nC nC V
Package Dimensions
unit : mm (typ) 7019A-003
Switching Time Test Circuit
VIN 2.0 0.25 0.15 4V 0V VIN 0 to 0.02 PW=10s D.C.1%
VDD=30V
3
2.1 1.6
D
Rg
ID=200mA RL=150 VOUT
1
0.25 0.65
2
0.3 P.G
G
6LN04MH 50
0.85
S
0.07
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
Rg=1.2k
200 180 160
ID -- VDS
V 6.0V 4.0V
2.0 V 1.5 V
300
ID -- VGS
VDS=10V
250
Drain Current, ID -- mA
8.0
V
140 120 100 80 60 40 20 0 0 0.1
Drain Current, ID -- mA
2.5
200
150
100
Ta =7 5
0 0.5 1.0
0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 IT11275
Drain-to-Source Voltage, VDS -- V
10 9 8 7 6
IT11274 7
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) --
6
Static Drain-to-Source On-State Resistance, RDS(on) --
5
--25
1.5 S= V
VGS=1.0V
50mA
5
4
100mA
4 3 2 1 0 0 2 4 6 8 10 IT11276
1 I D=
3
, VG 0mA
C
2.5 S= V
50
5 I D=
, VG 0mA
C 25 C
2
ID=10mA
10 I D=
0m
4.0 S= A, VG
V
1 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- C
IT11277
No. A0458-2/4
6LN04MH
Forward Transfer Admittance, yfs -- mS
1000 7 5 3
yfs -- ID
VDS=10V
1000 7 5 3 2
IS -- VSD
VGS=0V
Source Current, IS -- mA
2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT11278
= Ta
75
C
1.0 7 5 3 2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Drain Current, ID -- mA
3 2
SW Time -- ID
VDD=30V VGS=4V
Ciss, Coss, Crss -- pF
7 5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
Ta= 75 25 C C --25 C
C 25
5C --2
100 7 5 3 2 10 7 5 3 2
IT11322
Switching Time, SW Time -- ns
1000 7 5 3 2
td(off)
10 7 5 3 2
tf
100 7 5 3 2 10 0.001
Coss
Crss
td(on)
2 3 5 7 0.01 2 3
tr
1.0 5 7 0.1 2 3 57 IT11279 2 1.0 7 5 0 5 10 15 20 25 30 35 40 45 50 55 60
Drain Current, ID -- A
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT11280
ASO
Gate-to-Source Voltage, VGS -- V
VDS=30V ID=200mA
Drain Current, ID -- A
IDP=800mA
10
10s
10
3 2 0.1 7 5 3 2 0.01 7 5 3 2
ID=200mA
DC
ms
1m
0 s
s
op
era
10
tio
0m
n(
s
Operation in this area is limited by RDS(on).
Ta =
25 C )
0.9
1.0
0.001 0.1
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3
Total Gate Charge, Qg -- nC
0.7
IT11281
PD -- Ta
Drain-to-Source Voltage, VDS -- V
5 7 100 IT11282
Allowable Power Dissipation, PD -- W
0.6
M
0.5
ou
nt
ed
on
0.4
ac
er
am
ic
0.3
bo
ar
d
(9
00
m
0.2
m2 !
0.
8m
0.1 0 0 20 40 60 80 100 120
m
)
160
140
Ambient Temperature, Ta -- C
IT11283
No. A0458-3/4
6LN04MH
Note on usage : Since the 6LN04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice.
PS No. A0458-4/4

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